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| BAS 40-07W Silicon Schottky Diode Preliminary data * General-purpose diode for high-speed switching * Circuit protection * Voltage clamping * High-level detecting and mixing * Available with CECC quality assessment 3 4 2 1 VPS05605 BAS 40-07W Type BAS 40-07W Marking Ordering Code 47s Q62702- Pin Configuration 1=C1 2=C2 3=A2 4=A1 Package SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current, t 10ms Total power dissipation, T S 81C Junction temperature Operating temperature range Storage temperature Symbol Value 40 120 200 250 150 - 55 ...+150 - 55 ...+150 mW C Unit V mA VR IF I FSM Ptot Tj T op T stg Maximum Ratings Junction - ambient 1) RthJA RthJS 345 275 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BAS 40-07W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. V A 310 450 720 1 10 mV 380 500 1000 Unit V(BR) IR 40 I (BR) = 10 A Reverse current VR = 30 V VR = 40 V Forward voltage VF I F = 1 mA I F = 10 mA I F = 40 mA AC characteristics Diode capacitance CT - 4 10 5 100 - pF ps VR = 0 V, f = 1 MHz Charge carrier life time I F = 25 mA Differential forward resistance rf I F = 10 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BAS 40-07W Forward current IF = f V F) Reverse current IR = f (VR) T A = 25C TA = Parameter Diode capacitance CT = f (V R) f = 1MHz Differential forward resistance rf = f (IF) f = 10 kHz Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 BAS 40-07W Forward current IF = f (TA*; T S) * Package mounted on alumina Semiconductor Group Semiconductor Group 44 Sep-09-1998 1998-11-01 |
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